Antiferromagnetism in UO2 thin epitaxial films

Thin films (250-4500 Å) of epitaxial UO2 were produced by reactive sputtering on two different substrate materials: LaAlO3 and CaF2. Using the large enhancement present with resonant x-ray scattering using photons at the uranium M4 absorption edge, antiferromagnetic (AF) order was found in all films...

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Bibliographic Details
Main Authors: Bao, Z, Springell, R, Walker, H, Leiste, H, Kuebel, K, Prang, R, Nisbet, G, Langridge, S, Ward, R, Gouder, T, Caciuffo, R, Lander, G
Format: Journal article
Language:English
Published: 2013