Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire

Παρόμοια τεκμήρια

• Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
  ανά: Fu, Y, κ.ά.
  Έκδοση: (2000)
• Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots /
  ανά: Yussof Wahab, author, κ.ά.
  Έκδοση: (2006)
• Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
  ανά: Wahab, Yussof, κ.ά.
  Έκδοση: (2006)
• Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
  ανά: Wahab, Yussof, κ.ά.
  Έκδοση: (2006)
• Evolution of GaAs capping layer on In0.5Gao.5As/GaAs quantum dors structure /
  ανά: Didik Aryanto, 1983-, author, κ.ά.
  Έκδοση: (2009)