Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications

<p>The EDELWEISS-III experiment uses cryogenic HP-Ge detectors Fully covered with Inter-Digitized electrodes (FID). They are operated at low fields (&lt; 1 V=cm), and as a consequence charge-carrier trapping significantly affects both the ionization and heat energy measurements. This paper...

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Main Authors: Arnaud, Q, Armengaud, E, Augier, C, Benoît, A, Bergé, L, Billard, J, Blümer, J, de Boissière, T, Broniatowski, A, Camus, P, Cazes, A, Chapellier, M, Charlieux, F, Dumoulin, L, Eitel, K, Foerster, N, Fourches, N, Gascon, J, Giuliani, A, Gros, M, Hehn, L, Heuermann, G, de Jésus, M, Lin, J, Juillard, A, Kleifges, M, Kozlov, V, Kraus, H, Kéfélian, C, Kudryavtsev, V, Le-Sueur, H, Marnieros, S, Navick, X, Nones, C, Olivieri, E, Pari, P, Paul, B, Piro, M, Poda, D, Queguiner, E, Rozov, S, Sanglard, V, Schmidt, B, Scorza, S, Siebenborn, B, Tcherniakhovski, D, Vagneron, L, Weber, M, Yakushev, E
Format: Journal article
Published: Institute of Physics 2016
_version_ 1797067674957643776
author Arnaud, Q
Armengaud, E
Augier, C
Benoît, A
Bergé, L
Billard, J
Blümer, J
de Boissière, T
Broniatowski, A
Camus, P
Cazes, A
Chapellier, M
Charlieux, F
Dumoulin, L
Eitel, K
Foerster, N
Fourches, N
Gascon, J
Giuliani, A
Gros, M
Hehn, L
Heuermann, G
de Jésus, M
Lin, J
Juillard, A
Kleifges, M
Kozlov, V
Kraus, H
Kéfélian, C
Kudryavtsev, V
Le-Sueur, H
Marnieros, S
Navick, X
Nones, C
Olivieri, E
Pari, P
Paul, B
Piro, M
Poda, D
Queguiner, E
Rozov, S
Sanglard, V
Schmidt, B
Scorza, S
Siebenborn, B
Tcherniakhovski, D
Vagneron, L
Weber, M
Yakushev, E
author_facet Arnaud, Q
Armengaud, E
Augier, C
Benoît, A
Bergé, L
Billard, J
Blümer, J
de Boissière, T
Broniatowski, A
Camus, P
Cazes, A
Chapellier, M
Charlieux, F
Dumoulin, L
Eitel, K
Foerster, N
Fourches, N
Gascon, J
Giuliani, A
Gros, M
Hehn, L
Heuermann, G
de Jésus, M
Lin, J
Juillard, A
Kleifges, M
Kozlov, V
Kraus, H
Kéfélian, C
Kudryavtsev, V
Le-Sueur, H
Marnieros, S
Navick, X
Nones, C
Olivieri, E
Pari, P
Paul, B
Piro, M
Poda, D
Queguiner, E
Rozov, S
Sanglard, V
Schmidt, B
Scorza, S
Siebenborn, B
Tcherniakhovski, D
Vagneron, L
Weber, M
Yakushev, E
author_sort Arnaud, Q
collection OXFORD
description <p>The EDELWEISS-III experiment uses cryogenic HP-Ge detectors Fully covered with Inter-Digitized electrodes (FID). They are operated at low fields (&lt; 1 V=cm), and as a consequence charge-carrier trapping significantly affects both the ionization and heat energy measurements. This paper describes an analytical model of the signals induced by trapped charges in FID detectors based on the Shockley-Ramo theorem. It is used to demonstrate that veto electrodes, initially designed for the sole purpose of surface event rejection, can be used to provide a sensitivity to the depth of the energy deposits, characterize the trapping in the crystals, perform heat and ionization energy corrections and improve the ionization baseline resolutions. These procedures are applied successfully to actual data.</p>
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spelling oxford-uuid:4e2c0327-2606-4633-a75c-77abdbb521fd2022-03-26T15:59:49ZSignals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applicationsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:4e2c0327-2606-4633-a75c-77abdbb521fdSymplectic Elements at OxfordInstitute of Physics2016Arnaud, QArmengaud, EAugier, CBenoît, ABergé, LBillard, JBlümer, Jde Boissière, TBroniatowski, ACamus, PCazes, AChapellier, MCharlieux, FDumoulin, LEitel, KFoerster, NFourches, NGascon, JGiuliani, AGros, MHehn, LHeuermann, Gde Jésus, MLin, JJuillard, AKleifges, MKozlov, VKraus, HKéfélian, CKudryavtsev, VLe-Sueur, HMarnieros, SNavick, XNones, COlivieri, EPari, PPaul, BPiro, MPoda, DQueguiner, ERozov, SSanglard, VSchmidt, BScorza, SSiebenborn, BTcherniakhovski, DVagneron, LWeber, MYakushev, E<p>The EDELWEISS-III experiment uses cryogenic HP-Ge detectors Fully covered with Inter-Digitized electrodes (FID). They are operated at low fields (&lt; 1 V=cm), and as a consequence charge-carrier trapping significantly affects both the ionization and heat energy measurements. This paper describes an analytical model of the signals induced by trapped charges in FID detectors based on the Shockley-Ramo theorem. It is used to demonstrate that veto electrodes, initially designed for the sole purpose of surface event rejection, can be used to provide a sensitivity to the depth of the energy deposits, characterize the trapping in the crystals, perform heat and ionization energy corrections and improve the ionization baseline resolutions. These procedures are applied successfully to actual data.</p>
spellingShingle Arnaud, Q
Armengaud, E
Augier, C
Benoît, A
Bergé, L
Billard, J
Blümer, J
de Boissière, T
Broniatowski, A
Camus, P
Cazes, A
Chapellier, M
Charlieux, F
Dumoulin, L
Eitel, K
Foerster, N
Fourches, N
Gascon, J
Giuliani, A
Gros, M
Hehn, L
Heuermann, G
de Jésus, M
Lin, J
Juillard, A
Kleifges, M
Kozlov, V
Kraus, H
Kéfélian, C
Kudryavtsev, V
Le-Sueur, H
Marnieros, S
Navick, X
Nones, C
Olivieri, E
Pari, P
Paul, B
Piro, M
Poda, D
Queguiner, E
Rozov, S
Sanglard, V
Schmidt, B
Scorza, S
Siebenborn, B
Tcherniakhovski, D
Vagneron, L
Weber, M
Yakushev, E
Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications
title Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications
title_full Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications
title_fullStr Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications
title_full_unstemmed Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications
title_short Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications
title_sort signals induced by charge trapping in edelweiss fid detectors analytical modeling and applications
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