Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by c...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
| Published: |
2004
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