Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by c...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
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2004
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| _version_ | 1797067861443739648 |
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| author | Nicholas, R Shields, P Child, R Li, L Alphandery, E Mason, N Bumby, C |
| author_facet | Nicholas, R Shields, P Child, R Li, L Alphandery, E Mason, N Bumby, C |
| author_sort | Nicholas, R |
| collection | OXFORD |
| description | The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at similar to 2.3 mum. (C) 2003 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-06T22:02:26Z |
| format | Conference item |
| id | oxford-uuid:4f0cd674-23a0-4095-87e5-e6b1b92c7678 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T22:02:26Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | oxford-uuid:4f0cd674-23a0-4095-87e5-e6b1b92c76782022-03-26T16:04:49ZProperties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systemsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:4f0cd674-23a0-4095-87e5-e6b1b92c7678Symplectic Elements at Oxford2004Nicholas, RShields, PChild, RLi, LAlphandery, EMason, NBumby, CThe properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at similar to 2.3 mum. (C) 2003 Elsevier B.V. All rights reserved. |
| spellingShingle | Nicholas, R Shields, P Child, R Li, L Alphandery, E Mason, N Bumby, C Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems |
| title | Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems |
| title_full | Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems |
| title_fullStr | Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems |
| title_full_unstemmed | Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems |
| title_short | Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems |
| title_sort | properties of narrow gap quantum dots and wells in the inas insb gasb systems |
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