Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by c...
Main Authors: | Nicholas, R, Shields, P, Child, R, Li, L, Alphandery, E, Mason, N, Bumby, C |
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Format: | Conference item |
Published: |
2004
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