RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON

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Manylion Llyfryddiaeth
Prif Awduron:	Fell, T, Wilshaw, P
Fformat:	Journal article
Cyhoeddwyd:	1989

Eitemau Tebyg

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
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RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
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THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
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THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
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THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
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EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
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DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
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An SEM EBIC study of the electronic properties of dislocations in silicon
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On the locking of dislocations by oxygen in silicon
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Impurity locking of dislocations in silicon
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The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
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The segregation behaviour of oxygen at dislocations in silicon
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Locking of dislocations by oxygen in Cz-silicon
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AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
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Generation of dislocation glide loops in Czochralski silicon
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Dislocation locking by nitrogen impurities in FZ-silicon
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Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
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TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
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THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
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Chemical etching to dissolve dislocation cores in multicrystalline silicon
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Chemical etching to dissolve dislocation cores in multicrystalline silicon
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Nitrogen diffusion and interaction with dislocations in single-crystal silicon
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EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
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The influence of nitrogen on dislocation locking in float-zone silicon
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A room temperature cathodoluminescence study of dislocations in silicon
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The influence of nitrogen on dislocation locking in float-zone silicon
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NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
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Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
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ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
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THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

Electron beam induced current investigations of transition metal impurities at extended defects in silicon
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Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
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Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
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Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
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