RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
Egile Nagusiak: | Fell, T, Wilshaw, P |
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Formatua: | Journal article |
Argitaratua: |
1989
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Antzeko izenburuak
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RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
nork: Fell, T, et al.
Argitaratua: (1989) -
RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
nork: Wilshaw, P, et al.
Argitaratua: (1989) -
THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
nork: Wilshaw, P, et al.
Argitaratua: (1989) -
THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
nork: Wilshaw, P, et al.
Argitaratua: (1989) -
THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
nork: Fell, T, et al.
Argitaratua: (1991)