Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D islands ("hut" and macroscopic clusters) nucleate on top of a 3-4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thickness...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1998
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