Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D islands ("hut" and macroscopic clusters) nucleate on top of a 3-4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thickness...
| Prif Awduron: | , , , , |
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| Fformat: | Journal article |
| Iaith: | English |
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1998
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| _version_ | 1826272294596509696 |
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| author | Wedler, G Walt, J Hesjedal, T Chilla, E Koch, R |
| author_facet | Wedler, G Walt, J Hesjedal, T Chilla, E Koch, R |
| author_sort | Wedler, G |
| collection | OXFORD |
| description | It is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D islands ("hut" and macroscopic clusters) nucleate on top of a 3-4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thicknesses at which the 3D islands percolate. From the film stress - and supported by AFM investigations - three stages of film growth characterised by different reliefs of the misfit strain can be discriminated: (1) the pseudomorphic layer-by-layer stage, (2) nucleation and growth and (3) coalescence of 3D islands. © 1998 Elsevier Science B.V. All rights reserved. |
| first_indexed | 2024-03-06T22:10:17Z |
| format | Journal article |
| id | oxford-uuid:51917fb1-b0af-4284-8c18-1b8a275f53e0 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T22:10:17Z |
| publishDate | 1998 |
| record_format | dspace |
| spelling | oxford-uuid:51917fb1-b0af-4284-8c18-1b8a275f53e02022-03-26T16:20:20ZIntrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:51917fb1-b0af-4284-8c18-1b8a275f53e0EnglishSymplectic Elements at Oxford1998Wedler, GWalt, JHesjedal, TChilla, EKoch, RIt is well established that the growth of Ge on Si(001) proceeds by Stranski-Krastanov mode, i.e. 3D islands ("hut" and macroscopic clusters) nucleate on top of a 3-4 ML thick pseudomorphic layer. Here, we present in-situ intrinsic stress measurements of Ge/Si(001) up to the film thicknesses at which the 3D islands percolate. From the film stress - and supported by AFM investigations - three stages of film growth characterised by different reliefs of the misfit strain can be discriminated: (1) the pseudomorphic layer-by-layer stage, (2) nucleation and growth and (3) coalescence of 3D islands. © 1998 Elsevier Science B.V. All rights reserved. |
| spellingShingle | Wedler, G Walt, J Hesjedal, T Chilla, E Koch, R Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) |
| title | Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) |
| title_full | Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) |
| title_fullStr | Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) |
| title_full_unstemmed | Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) |
| title_short | Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) |
| title_sort | intrinsic stress upon stranski krastanov growth of ge on si 001 |
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