Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

Uniform arrays of sharp polysilicon held emitters have been fabricated in gridded configuration using state of the art microfabrication techniques including high resolution electron beam lithography and plasma dry etching. Emission currents up to 2.5 mu A/tip have been obtained at a 90 V grid-bias....

詳細記述

書誌詳細
主要な著者: Huq, SE, Huang, M, Wilshaw, P, Prewett, P
フォーマット: Conference item
出版事項: 1998