Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

Uniform arrays of sharp polysilicon held emitters have been fabricated in gridded configuration using state of the art microfabrication techniques including high resolution electron beam lithography and plasma dry etching. Emission currents up to 2.5 mu A/tip have been obtained at a 90 V grid-bias....

Полное описание

Библиографические подробности
Главные авторы:	Huq, SE, Huang, M, Wilshaw, P, Prewett, P
Формат:	Conference item
Опубликовано:	1998

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