EQUILIBRIUM DISSOCIATION CONFIGURATION OF MISFIT DISLOCATIONS IN LOW STRAINED IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES

مواد مشابهة

• THE GEOMETRY OF MISFIT DISLOCATIONS WITH RESPECT TO THE STRAINED INTERFACE IN [001] IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
  حسب: Zou, J, وآخرون
  منشور في: (1994)
• Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
  حسب: Zou, J, وآخرون
  منشور في: (1996)
• Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures
  حسب: Zou, J, وآخرون
  منشور في: (1996)
• MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES
  حسب: Zou, J, وآخرون
  منشور في: (1994)
• Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures.
  حسب: Zou, J, وآخرون
  منشور في: (1994)