Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of...
| Main Authors: | , , , , |
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| Format: | Conference item |
| Published: |
1996
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