Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of...
| Main Authors: | , , , , |
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| Format: | Conference item |
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1996
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| _version_ | 1826272856018780160 |
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| author | RussellHarriott, J Zou, J Cockayne, D Moon, A Usher, B |
| author_facet | RussellHarriott, J Zou, J Cockayne, D Moon, A Usher, B |
| author_sort | RussellHarriott, J |
| collection | OXFORD |
| description | Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation density is shown to oscillate along the sample and this oscillation can be partly explained by the presence of the oval defects. |
| first_indexed | 2024-03-06T22:19:11Z |
| format | Conference item |
| id | oxford-uuid:5470745c-beef-48ab-8f33-45626546704d |
| institution | University of Oxford |
| last_indexed | 2024-03-06T22:19:11Z |
| publishDate | 1996 |
| record_format | dspace |
| spelling | oxford-uuid:5470745c-beef-48ab-8f33-45626546704d2022-03-26T16:37:50ZCathodoluminescence study of oval defects in MBE grown InGaAs/GaAsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:5470745c-beef-48ab-8f33-45626546704dSymplectic Elements at Oxford1996RussellHarriott, JZou, JCockayne, DMoon, AUsher, BSemiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation density is shown to oscillate along the sample and this oscillation can be partly explained by the presence of the oval defects. |
| spellingShingle | RussellHarriott, J Zou, J Cockayne, D Moon, A Usher, B Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs |
| title | Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs |
| title_full | Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs |
| title_fullStr | Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs |
| title_full_unstemmed | Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs |
| title_short | Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs |
| title_sort | cathodoluminescence study of oval defects in mbe grown ingaas gaas |
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