Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs

Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of...

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Bibliographic Details
Main Authors:	RussellHarriott, J, Zou, J, Cockayne, D, Moon, A, Usher, B
Format:	Conference item
Published:	1996

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