Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
ABSORPTION CHARACTERISTICS OF...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
Bibliographic Details
Main Authors:
Lakrimi, M
,
Mason, N
,
Nicholas, R
,
Stringfellow, G
,
Summers, G
,
Walker, P
Format:
Conference item
Published:
1991
Holdings
Description
Similar Items
Staff View
Similar Items
GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
by: Haywood, S, et al.
Published: (1991)
OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
by: Lakrimi, M, et al.
Published: (1992)
GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
by: Lakrimi, M, et al.
Published: (1991)
Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
by: Norman, A, et al.
Published: (1997)
Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006)