ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Lakrimi, M, Mason, N, Nicholas, R, Stringfellow, G, Summers, G, Walker, P
Formáid:	Conference item
Foilsithe / Cruthaithe:	1991

Míreanna comhchosúla

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
de réir: Lakrimi, M, et al.
Foilsithe / Cruthaithe: (1992)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
de réir: Haywood, S, et al.
Foilsithe / Cruthaithe: (1991)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
de réir: Lakrimi, M, et al.
Foilsithe / Cruthaithe: (1991)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
de réir: Norman, A, et al.
Foilsithe / Cruthaithe: (1997)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
de réir: Roslan, Sharizar, et al.
Foilsithe / Cruthaithe: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
de réir: Zulkafli Othaman, author, et al.
Foilsithe / Cruthaithe: (2007)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
de réir: Booker, G, et al.
Foilsithe / Cruthaithe: (1997)

[001]-ORIENTED AND PIEZOELECTRIC-[111]-ORIENTED INAS/GASB STRUCTURES UNDER HYDROSTATIC-PRESSURE
de réir: Symons, D, et al.
Foilsithe / Cruthaithe: (1994)

EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
de réir: D. A. Yatsyna, et al.
Foilsithe / Cruthaithe: (2019-06-01)

CYCLOTRON-RESONANCE IN INAS/GASB HETEROSTRUCTURES
de réir: Sundaram, G, et al.
Foilsithe / Cruthaithe: (1992)

GASB HETEROSTRUCTURES GROWN BY MOVPE
de réir: Chidley, E, et al.
Foilsithe / Cruthaithe: (1988)

Intersubband lifetimes in InAs/GaSb superlattices using saturated absorption spectroscopy
de réir: Poulter, A, et al.
Foilsithe / Cruthaithe: (1998)

Optical probing of the minigap in InAs/GaSb superlattices
de réir: Poulter, A, et al.
Foilsithe / Cruthaithe: (1998)

Intersubband transitions in InAs GaSb semimetallic superlattices
de réir: Poulter, A, et al.
Foilsithe / Cruthaithe: (1999)

Optical probing of the minigap in InAs/GaSb superlattices
de réir: Poulter, A, et al.
Foilsithe / Cruthaithe: (1999)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
de réir: Warburton, R, et al.
Foilsithe / Cruthaithe: (1991)

ONE-DIMENSIONAL TRANSPORT AND GATING OF INAS/GASB STRUCTURES
de réir: Chen, Y, et al.
Foilsithe / Cruthaithe: (1994)

TEMPERATURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES
de réir: Symons, D, et al.
Foilsithe / Cruthaithe: (1995)

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.
de réir: Booker, G, et al.
Foilsithe / Cruthaithe: (1994)

Magnetic breakdown in the semimetallic InAs/GaSb system
de réir: Symons, D, et al.
Foilsithe / Cruthaithe: (1998)

Magnetic breakdown in the semimetallic InAs/GaSb system
de réir: Symons, D, et al.
Foilsithe / Cruthaithe: (1998)

GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
de réir: Booker, G, et al.
Foilsithe / Cruthaithe: (1995)

Intersubband transitions in InAs/GaSb semi-metallic superlattices
de réir: Poulter, A, et al.
Foilsithe / Cruthaithe: (1998)

Interface composition dependence of the band offset in InAs/GaSb
de réir: Daly, MS, et al.
Foilsithe / Cruthaithe: (1996)

Interface composition dependence of the band offset in InAs/GaSb
de réir: Daly, MS, et al.
Foilsithe / Cruthaithe: (1996)

Long wavelength photoresponse of short period InAs/GaSb superlattices
de réir: Lakrimi, M, et al.
Foilsithe / Cruthaithe: (1995)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
de réir: Akihiro Ohtake, et al.
Foilsithe / Cruthaithe: (2018-11-01)

PIEZOELECTRIC CONTROL OF DOPING AND BAND-STRUCTURE IN THE CROSSED GAP SYSTEM GASB/INAS
de réir: Lakrimi, M, et al.
Foilsithe / Cruthaithe: (1992)

ORIENTATION AND PRESSURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES
de réir: Symons, D, et al.
Foilsithe / Cruthaithe: (1994)

Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
de réir: Nicholas, R, et al.
Foilsithe / Cruthaithe: (2004)

Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
de réir: Ulyana M. Matveyenka, et al.
Foilsithe / Cruthaithe: (2024-10-01)

GROWTH OF GASB BY MOVPE
de réir: Haywood, S, et al.
Foilsithe / Cruthaithe: (1988)

Non-Debye heat capacity formula refined and applied to GaP, GaAs, GaSb, InP, InAs, and InSb
de réir: R. Pässler
Foilsithe / Cruthaithe: (2013-08-01)

Minigaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
de réir: Lakrimi, M, et al.
Foilsithe / Cruthaithe: (1997)

Thermopower and conductivity of InAs/GaSb crossed-gap heterostructures in a magnetic field
de réir: Cao, S, et al.
Foilsithe / Cruthaithe: (1996)

Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL
de réir: Mock, P, et al.
Foilsithe / Cruthaithe: (1999)

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
de réir: Roberts, M, et al.
Foilsithe / Cruthaithe: (2002)

Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field
de réir: De Meester, R, et al.
Foilsithe / Cruthaithe: (2000)

Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
de réir: Lakrimi, M, et al.
Foilsithe / Cruthaithe: (1998)

Mini-gaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
de réir: Lakrimi, M, et al.
Foilsithe / Cruthaithe: (1998)