ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE

Ítems similars

• GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
  per: Haywood, S, et al.
  Publicat: (1991)
• OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
  per: Lakrimi, M, et al.
  Publicat: (1992)
• GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
  per: Lakrimi, M, et al.
  Publicat: (1991)
• Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
  per: Norman, A, et al.
  Publicat: (1997)
• Growth parameters of InAs/GaAs quantum dots grown by MOVPE
  per: Roslan, Sharizar, et al.
  Publicat: (2006)