Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
THE ELASTIC PROPERTIES OF ION-...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
THE ELASTIC PROPERTIES OF ION-IMPLANTED SILICON
Bibliographic Details
Main Authors:
Burnett, P
,
Briggs, G
Format:
Journal article
Published:
1986
Holdings
Description
Similar Items
Staff View
Similar Items
ELASTIC PROPERTIES OF GAAS DURING AMORPHIZATION BY ION-IMPLANTATION
by: Mutti, P, et al.
Published: (1995)
Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation
by: Hewak, Dan W., et al.
Published: (2014)
{111} defects in 1-MeV-silicon-ion-implanted silicon.
by: Chou, C, et al.
Published: (1995)
{111} and {311} rod-like defects in silicon ion implanted silicon
by: Chou, C, et al.
Published: (1996)
Ion implantation in silicon to facilitate testing of photonic circuits
by: Reed, Graham T., et al.
Published: (2019)