Polyamorphic amorphous silicon at high pressure: raman and spatially resolved X-ray scattering and molecular dynamics studies.

We studied the low-frequency Raman and X-ray scattering behavior of amorphous silicon (a-Si) at high pressure throughout the range where the density-driven polyamorphic transformation between the low-density amorphous (LDA) semiconductor and a novel metallic high-density amorphous (HDA) polyamorph o...

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Bibliografiske detaljer
Main Authors: Daisenberger, D, Deschamps, T, Champagnon, B, Mezouar, M, Quesada Cabrera, R, Wilson, M, McMillan, P
Format: Journal article
Sprog:English
Udgivet: 2011