Polyamorphic amorphous silicon at high pressure: raman and spatially resolved X-ray scattering and molecular dynamics studies.
We studied the low-frequency Raman and X-ray scattering behavior of amorphous silicon (a-Si) at high pressure throughout the range where the density-driven polyamorphic transformation between the low-density amorphous (LDA) semiconductor and a novel metallic high-density amorphous (HDA) polyamorph o...
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Journal article |
| Sprache: | English |
| Veröffentlicht: |
2011
|