Polyamorphic amorphous silicon at high pressure: raman and spatially resolved X-ray scattering and molecular dynamics studies.
We studied the low-frequency Raman and X-ray scattering behavior of amorphous silicon (a-Si) at high pressure throughout the range where the density-driven polyamorphic transformation between the low-density amorphous (LDA) semiconductor and a novel metallic high-density amorphous (HDA) polyamorph o...
| Egile Nagusiak: | , , , , , , |
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| Formatua: | Journal article |
| Hizkuntza: | English |
| Argitaratua: |
2011
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