Polyamorphic amorphous silicon at high pressure: raman and spatially resolved X-ray scattering and molecular dynamics studies.

We studied the low-frequency Raman and X-ray scattering behavior of amorphous silicon (a-Si) at high pressure throughout the range where the density-driven polyamorphic transformation between the low-density amorphous (LDA) semiconductor and a novel metallic high-density amorphous (HDA) polyamorph o...

詳細記述

書誌詳細
主要な著者: Daisenberger, D, Deschamps, T, Champagnon, B, Mezouar, M, Quesada Cabrera, R, Wilson, M, McMillan, P
フォーマット: Journal article
言語:English
出版事項: 2011