The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
Tl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current d...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1998
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| Summary: | Tl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current densities up to 3.4 × 105 A cm-2 (77 K) have been achieved. In order to understand the relationship between the microstructure and electrical properties the films have been characterized by a variety of techniques, but especially transmission electron microscopy and allied methods. Microstructural features such as a-axis oriented grains, secondary phase particles, grain boundaries and surface outgrowths (especially of non-superconductor phases) have been found to have a significant effect on the surface resistance. |
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