The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures

Tl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current d...

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Main Authors: O'Connor, J, Jenkins, A, Grovenor, C, Goringe, M, Dew-Hughes, D
Format: Journal article
Language:English
Published: 1998
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author O'Connor, J
Jenkins, A
Grovenor, C
Goringe, M
Dew-Hughes, D
author_facet O'Connor, J
Jenkins, A
Grovenor, C
Goringe, M
Dew-Hughes, D
author_sort O'Connor, J
collection OXFORD
description Tl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current densities up to 3.4 × 105 A cm-2 (77 K) have been achieved. In order to understand the relationship between the microstructure and electrical properties the films have been characterized by a variety of techniques, but especially transmission electron microscopy and allied methods. Microstructural features such as a-axis oriented grains, secondary phase particles, grain boundaries and surface outgrowths (especially of non-superconductor phases) have been found to have a significant effect on the surface resistance.
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spelling oxford-uuid:549dc3ab-6602-42eb-bd86-3dcf478f52c02022-03-26T16:39:01ZThe microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperaturesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:549dc3ab-6602-42eb-bd86-3dcf478f52c0EnglishSymplectic Elements at Oxford1998O'Connor, JJenkins, AGrovenor, CGoringe, MDew-Hughes, DTl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current densities up to 3.4 × 105 A cm-2 (77 K) have been achieved. In order to understand the relationship between the microstructure and electrical properties the films have been characterized by a variety of techniques, but especially transmission electron microscopy and allied methods. Microstructural features such as a-axis oriented grains, secondary phase particles, grain boundaries and surface outgrowths (especially of non-superconductor phases) have been found to have a significant effect on the surface resistance.
spellingShingle O'Connor, J
Jenkins, A
Grovenor, C
Goringe, M
Dew-Hughes, D
The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
title The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
title_full The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
title_fullStr The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
title_full_unstemmed The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
title_short The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
title_sort microstructure and electrical properties of tl2ba2ca1cu2ox thin films processed at low temperatures
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