The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures
Tl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current d...
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Format: | Journal article |
Language: | English |
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1998
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author | O'Connor, J Jenkins, A Grovenor, C Goringe, M Dew-Hughes, D |
author_facet | O'Connor, J Jenkins, A Grovenor, C Goringe, M Dew-Hughes, D |
author_sort | O'Connor, J |
collection | OXFORD |
description | Tl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current densities up to 3.4 × 105 A cm-2 (77 K) have been achieved. In order to understand the relationship between the microstructure and electrical properties the films have been characterized by a variety of techniques, but especially transmission electron microscopy and allied methods. Microstructural features such as a-axis oriented grains, secondary phase particles, grain boundaries and surface outgrowths (especially of non-superconductor phases) have been found to have a significant effect on the surface resistance. |
first_indexed | 2024-03-06T22:19:44Z |
format | Journal article |
id | oxford-uuid:549dc3ab-6602-42eb-bd86-3dcf478f52c0 |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-06T22:19:44Z |
publishDate | 1998 |
record_format | dspace |
spelling | oxford-uuid:549dc3ab-6602-42eb-bd86-3dcf478f52c02022-03-26T16:39:01ZThe microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperaturesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:549dc3ab-6602-42eb-bd86-3dcf478f52c0EnglishSymplectic Elements at Oxford1998O'Connor, JJenkins, AGrovenor, CGoringe, MDew-Hughes, DTl2Ba2Ca1Cu2Ox thin films on (001) LaAlO3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740°surface resistance values as low as 400 μΩ (79 K, 10 GHz) and large-area critical current densities up to 3.4 × 105 A cm-2 (77 K) have been achieved. In order to understand the relationship between the microstructure and electrical properties the films have been characterized by a variety of techniques, but especially transmission electron microscopy and allied methods. Microstructural features such as a-axis oriented grains, secondary phase particles, grain boundaries and surface outgrowths (especially of non-superconductor phases) have been found to have a significant effect on the surface resistance. |
spellingShingle | O'Connor, J Jenkins, A Grovenor, C Goringe, M Dew-Hughes, D The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures |
title | The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures |
title_full | The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures |
title_fullStr | The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures |
title_full_unstemmed | The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures |
title_short | The microstructure and electrical properties of Tl2Ba2Ca1Cu2Ox thin films processed at low temperatures |
title_sort | microstructure and electrical properties of tl2ba2ca1cu2ox thin films processed at low temperatures |
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