Temperature-dependent fine structure splitting in InGaN quantum dots
We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based o...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Published: |
AIP Publishing
2017
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