Temperature-dependent fine structure splitting in InGaN quantum dots

Temperature-dependent fine structure splitting in InGaN quantum dots

We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based o...

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Bibliographic Details
Main Authors:	Wang, T, Puchtler, T, Zhu, T, Jarman, J, Kocher, C, Oliver, R, Taylor, R
Format:	Journal article
Published:	AIP Publishing 2017

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