Temperature-dependent fine structure splitting in InGaN quantum dots

Temperature-dependent fine structure splitting in InGaN quantum dots

We report the experimental observation of temperature-dependent fine structure splitting in semiconductor quantum dots using a non-polar (11-20) a-plane InGaN system, up to the on-chip Peltier cooling threshold of 200 K. At 5 K, a statistical average splitting of 443 ± 132 μeV has been found based o...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Wang, T, Puchtler, T, Zhu, T, Jarman, J, Kocher, C, Oliver, R, Taylor, R
Μορφή:	Journal article
Έκδοση:	AIP Publishing 2017

Παρόμοια τεκμήρια

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Έκδοση: (2017)

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Έκδοση: (2017)

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Έκδοση: (2017)

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Έκδοση: (2017)

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot
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