Properties of selective-area-growth GaN grown on various buffered Si(111) substrates by HVPE
Selective area growth (SAG) of GaN by hydride vapor phase epitaxy (HVPE) has been performed on SiO2 stripe-mask-patterned Si(111) substrates with various buffer layers. AlGaN, GaN and AIN films were used as buffer layers. In order to grow selectively, the orientation of the SiO2 mask pattern was ope...
| Main Authors: | , , , , , , , |
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| Format: | Conference item |
| Published: |
2007
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