The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
There is a great deal of interest in the underlying causes of efficiency droop in InGaN/GaN quantum welllight emitting diodes, with several physical mechanisms being put forward to explain the phenomenon. In this paper we report on the observation of a reduction in the localization induced S-shape t...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Published: |
American Institute of Physics
2012
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