The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

There is a great deal of interest in the underlying causes of efficiency droop in InGaN/GaN quantum welllight emitting diodes, with several physical mechanisms being put forward to explain the phenomenon. In this paper we report on the observation of a reduction in the localization induced S-shape t...

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Bibliographic Details
Main Authors:	Hammersley, S, Watson-Parris, D, Dawson, P, Godfrey, M, Badcock, T, Kappers, M, McAleese, C, Oliver, R, Humphreys, C
Format:	Journal article
Published:	American Institute of Physics 2012

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