Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation

Manylion Llyfryddiaeth
Prif Awduron:	Lang, C, Cockayne, D, Nguyen-Manh, D
Fformat:	Journal article
Cyhoeddwyd:	2005

Eitemau Tebyg

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
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The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
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GeSi quantum dots: the effect of alloying on the shape transformation
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Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping.
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Strain relaxation by alloying effects in Ge islands grown on Si(001)
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[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
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Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
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Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
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Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
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Annealing effects on the microstructure of Ge/Si(001) quantum dots
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Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures
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Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
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Morphology Analysis of Si Island Arrays on Si(001)
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Stress and relief of misfit strain of Ge/Si(001)
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First principles study of GeSi exchange mechanisms at the Si(001) surface
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Band-offset determination and excitons in SiGe/Si(001) quantum wells
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Competing growth mechanisms of Ge/Si(001) coherent clusters
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Ion irradiation of GeSi Si strained-layer heterostructures
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The incommensurate nature of epitaxial titanium disilicide islands on Si(001)
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Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
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Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD
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Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
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A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations
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Limited-area growth of Ge and SiGe on Si
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Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices
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Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature
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