Near-band gap luminescence at room temperature from dislocations in silicon
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon ions at a range of doses and energies to produce, after suitable thermal annealing, a band of disloc...
| मुख्य लेखकों: | , , , , , |
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| स्वरूप: | Conference item |
| प्रकाशित: |
2003
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