Near-band gap luminescence at room temperature from dislocations in silicon
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon ions at a range of doses and energies to produce, after suitable thermal annealing, a band of disloc...
| Main Authors: | , , , , , |
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| Format: | Conference item |
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2003
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| _version_ | 1797069748432797696 |
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| author | Stowe, D Galloway, SA Senkader, S Mallik, K Falster, R Wilshaw, P |
| author_facet | Stowe, D Galloway, SA Senkader, S Mallik, K Falster, R Wilshaw, P |
| author_sort | Stowe, D |
| collection | OXFORD |
| description | Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon ions at a range of doses and energies to produce, after suitable thermal annealing, a band of dislocation loops typically similar to 150 nm from the surface. Room-temperature CL from specimens with a range of dislocation densities was observed with a peak wavelength of 1154 nm. The luminescence was found to be independent of the presence of a p-n junction and the luminescence efficiency was lower for the relatively lowly doped silicon implanted samples than in the case of the highly doped boron implanted samples. We attribute the luminescence behaviour to electron-hole recombination at the dislocations themselves and propose a model for this near-band gap luminescence based on one-dimensional energy bands previously associated with the strain field of dislocations. (C) 2003 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-06T22:29:03Z |
| format | Conference item |
| id | oxford-uuid:57a90410-c594-407a-99c4-3a94dfe5138d |
| institution | University of Oxford |
| last_indexed | 2024-03-06T22:29:03Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | oxford-uuid:57a90410-c594-407a-99c4-3a94dfe5138d2022-03-26T16:58:04ZNear-band gap luminescence at room temperature from dislocations in siliconConference itemhttp://purl.org/coar/resource_type/c_5794uuid:57a90410-c594-407a-99c4-3a94dfe5138dSymplectic Elements at Oxford2003Stowe, DGalloway, SASenkader, SMallik, KFalster, RWilshaw, PCathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon ions at a range of doses and energies to produce, after suitable thermal annealing, a band of dislocation loops typically similar to 150 nm from the surface. Room-temperature CL from specimens with a range of dislocation densities was observed with a peak wavelength of 1154 nm. The luminescence was found to be independent of the presence of a p-n junction and the luminescence efficiency was lower for the relatively lowly doped silicon implanted samples than in the case of the highly doped boron implanted samples. We attribute the luminescence behaviour to electron-hole recombination at the dislocations themselves and propose a model for this near-band gap luminescence based on one-dimensional energy bands previously associated with the strain field of dislocations. (C) 2003 Elsevier B.V. All rights reserved. |
| spellingShingle | Stowe, D Galloway, SA Senkader, S Mallik, K Falster, R Wilshaw, P Near-band gap luminescence at room temperature from dislocations in silicon |
| title | Near-band gap luminescence at room temperature from dislocations in silicon |
| title_full | Near-band gap luminescence at room temperature from dislocations in silicon |
| title_fullStr | Near-band gap luminescence at room temperature from dislocations in silicon |
| title_full_unstemmed | Near-band gap luminescence at room temperature from dislocations in silicon |
| title_short | Near-band gap luminescence at room temperature from dislocations in silicon |
| title_sort | near band gap luminescence at room temperature from dislocations in silicon |
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