Near-band gap luminescence at room temperature from dislocations in silicon
Cathodoluminescence (CL) has been used to investigate room-temperature light emission from dislocations generated by ion-implantation. Czochralski silicon wafers were implanted with boron and silicon ions at a range of doses and energies to produce, after suitable thermal annealing, a band of disloc...
| Main Authors: | , , , , , |
|---|---|
| 格式: | Conference item |
| 出版: |
2003
|