HOT ELECTRON RELAXATION AND TRAPPING IN MODULATION-DOPED GaAs/GaA1As MULTIPLE QUANTUM WELL HETEROSTRUCTURES.

There is much current interest in determining the energy relaxation processes of hot carriers confined in quantum well heterostructures. We present measurements of time-resolved photoluminescence from hot carriers and from carrier recombination at shallow traps. The experimental technique is basical...

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Détails bibliographiques
Auteurs principaux: Ryan, J, Taylor, R, Turberfield, A, Maciel, A, Worlock, J, Gossard, A, Wiegmann, W
Format: Journal article
Langue:English
Publié: Springer-Verlag 1985