Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 degrees C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuse...
| Հիմնական հեղինակներ: | , , , |
|---|---|
| Ձևաչափ: | Conference item |
| Հրապարակվել է: |
2006
|