Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 degrees C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuse...
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| Format: | Conference item |
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2006
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| _version_ | 1797070181247221760 |
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| author | Murphy, J Senkader, S Falster, R Wilshaw, P |
| author_facet | Murphy, J Senkader, S Falster, R Wilshaw, P |
| author_sort | Murphy, J |
| collection | OXFORD |
| description | Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 degrees C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured at 550 degrees C. The dislocation unlocking stress as a function of annealing time is found to obey distinct regimes. For all annealing temperatures investigated, the unlocking stress initially rises approximately linearly before taking a constant value. The unlocking stress data are analyzed to give values for the binding energy of oxygen to a dislocation and the effective diffusion coefficient of oxygen in silicon. At high temperatures (650-850 degrees C) the diffusion coefficient of oxygen is found to be in agreement with established values. At low temperatures (350-650 degrees C) oxygen transport is found to be strongly enhanced, with an activation energy of approximately 1.5eV and a pre-factor which depends on oxygen concentration. For given annealing conditions, the dislocation unlocking stress has been found to depend on the temperature at which the unlocking process is carried out in the 450-700 degrees C temperature range. Furthermore, the dislocation locking technique has been used to study the effect of high concentrations of shallow dopants on oxygen diffusion in the 350-550 degrees C temperature range. Oxygen transport has been found to be unaffected by a high antimony concentration (similar to 3 x 10(18) cm(-3)), but is found to be enhanced by a factor of approximately 44 in material with a high boron concentration (similar to 5 x 10(18) cm(-3)). (c) 2006 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-06T22:35:19Z |
| format | Conference item |
| id | oxford-uuid:59b10dc5-768a-40ff-afc0-c0a5614050b1 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T22:35:19Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:59b10dc5-768a-40ff-afc0-c0a5614050b12022-03-26T17:11:13ZOxygen transport in Czochralski silicon investigated by dislocation locking experimentsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:59b10dc5-768a-40ff-afc0-c0a5614050b1Symplectic Elements at Oxford2006Murphy, JSenkader, SFalster, RWilshaw, PDislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 degrees C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured at 550 degrees C. The dislocation unlocking stress as a function of annealing time is found to obey distinct regimes. For all annealing temperatures investigated, the unlocking stress initially rises approximately linearly before taking a constant value. The unlocking stress data are analyzed to give values for the binding energy of oxygen to a dislocation and the effective diffusion coefficient of oxygen in silicon. At high temperatures (650-850 degrees C) the diffusion coefficient of oxygen is found to be in agreement with established values. At low temperatures (350-650 degrees C) oxygen transport is found to be strongly enhanced, with an activation energy of approximately 1.5eV and a pre-factor which depends on oxygen concentration. For given annealing conditions, the dislocation unlocking stress has been found to depend on the temperature at which the unlocking process is carried out in the 450-700 degrees C temperature range. Furthermore, the dislocation locking technique has been used to study the effect of high concentrations of shallow dopants on oxygen diffusion in the 350-550 degrees C temperature range. Oxygen transport has been found to be unaffected by a high antimony concentration (similar to 3 x 10(18) cm(-3)), but is found to be enhanced by a factor of approximately 44 in material with a high boron concentration (similar to 5 x 10(18) cm(-3)). (c) 2006 Elsevier B.V. All rights reserved. |
| spellingShingle | Murphy, J Senkader, S Falster, R Wilshaw, P Oxygen transport in Czochralski silicon investigated by dislocation locking experiments |
| title | Oxygen transport in Czochralski silicon investigated by dislocation locking experiments |
| title_full | Oxygen transport in Czochralski silicon investigated by dislocation locking experiments |
| title_fullStr | Oxygen transport in Czochralski silicon investigated by dislocation locking experiments |
| title_full_unstemmed | Oxygen transport in Czochralski silicon investigated by dislocation locking experiments |
| title_short | Oxygen transport in Czochralski silicon investigated by dislocation locking experiments |
| title_sort | oxygen transport in czochralski silicon investigated by dislocation locking experiments |
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