Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

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Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 degrees C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuse...

Szczegółowa specyfikacja

Opis bibliograficzny
Główni autorzy:	Murphy, J, Senkader, S, Falster, R, Wilshaw, P
Format:	Conference item
Wydane:	2006

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