Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Εμφάνιση άλλων εκδόσεων (1)

Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 degrees C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuse...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Murphy, J, Senkader, S, Falster, R, Wilshaw, P
Μορφή:	Conference item
Έκδοση:	2006

Παρόμοια τεκμήρια

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