Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 degrees C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuse...
| Автори: | , , , |
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| Формат: | Conference item |
| Опубліковано: |
2006
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
Опубліковано 2006
Journal article