Interfacial Diffusion during Growth of SnO2(110) on TiO2(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Oxygen plasma-assisted molecular beam epitaxy was used to grow layers of SnO2 on single-crystal ratile TiO2 (110) substrates. Surface composition was studied by X-ray photoelectron spectroscopy, whereas secondary ion mass spectrometry was used to determine the depth distribution of Sn and Ti. For su...

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Bibliographic Details
Main Authors: Palgrave, R, Bourlange, A, Payne, D, Foord, J, Egdell, R
Format: Journal article
Language:English
Published: 2009