Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study
Heteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AIM) in order to elucidate the growth modes. InN/GaN grows in a 2D mode, despite the fact that there is an 11.2% lattice mismatch. When we grow InN on Si...
| Main Authors: | , , , , |
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| Format: | Conference item |
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2001
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