Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study
Heteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AIM) in order to elucidate the growth modes. InN/GaN grows in a 2D mode, despite the fact that there is an 11.2% lattice mismatch. When we grow InN on Si...
| Main Authors: | , , , , |
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| Format: | Conference item |
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2001
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| _version_ | 1797070701051510784 |
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| author | Norenberg, C Martin, MG Oliver, R Castell, M Briggs, G |
| author_facet | Norenberg, C Martin, MG Oliver, R Castell, M Briggs, G |
| author_sort | Norenberg, C |
| collection | OXFORD |
| description | Heteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AIM) in order to elucidate the growth modes. InN/GaN grows in a 2D mode, despite the fact that there is an 11.2% lattice mismatch. When we grow InN on Si(111), we again observe 2D growth, with small islands of varying size. Surface reconstructions on the islands have been observed with atomic resolution. We observe different behaviour when we grow InN/GaN in the presence of silicon, which leads to a bimodal distribution of 3D islands. |
| first_indexed | 2024-03-06T22:42:43Z |
| format | Conference item |
| id | oxford-uuid:5c242190-d72a-4ef1-b3ec-91d3c8086a3b |
| institution | University of Oxford |
| last_indexed | 2024-03-06T22:42:43Z |
| publishDate | 2001 |
| record_format | dspace |
| spelling | oxford-uuid:5c242190-d72a-4ef1-b3ec-91d3c8086a3b2022-03-26T17:26:18ZHeteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM studyConference itemhttp://purl.org/coar/resource_type/c_5794uuid:5c242190-d72a-4ef1-b3ec-91d3c8086a3bSymplectic Elements at Oxford2001Norenberg, CMartin, MGOliver, RCastell, MBriggs, GHeteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AIM) in order to elucidate the growth modes. InN/GaN grows in a 2D mode, despite the fact that there is an 11.2% lattice mismatch. When we grow InN on Si(111), we again observe 2D growth, with small islands of varying size. Surface reconstructions on the islands have been observed with atomic resolution. We observe different behaviour when we grow InN/GaN in the presence of silicon, which leads to a bimodal distribution of 3D islands. |
| spellingShingle | Norenberg, C Martin, MG Oliver, R Castell, M Briggs, G Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study |
| title | Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study |
| title_full | Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study |
| title_fullStr | Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study |
| title_full_unstemmed | Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study |
| title_short | Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study |
| title_sort | heteroepitaxial growth of inn islands on gan 0001 and si 111 a combined stm afm study |
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