MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

ग्रंथसूची विवरण
मुख्य लेखकों:	Ourmazd, A, Wilshaw, P, Cripps, R
स्वरूप:	Journal article
प्रकाशित:	1982

समान संसाधन

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1983)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1985)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1986)

An SEM EBIC study of the electronic properties of dislocations in silicon
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1984)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
द्वारा: Wilshaw, P, और अन्य
प्रकाशित: (1991)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1993)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
द्वारा: Galloway, S, और अन्य
प्रकाशित: (1993)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
द्वारा: Fell, T, और अन्य
प्रकाशित: (1991)

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
द्वारा: Wilshaw, P
प्रकाशित: (1989)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1982)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1983)

ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
द्वारा: Blumtritt, H, और अन्य
प्रकाशित: (1989)

Impurity locking of dislocations in silicon
द्वारा: Giannattasio, A, और अन्य
प्रकाशित: (2004)

On the locking of dislocations by oxygen in silicon
द्वारा: Senkader, S, और अन्य
प्रकाशित: (2001)

Locking of dislocations by oxygen in Cz-silicon
द्वारा: Senkader, S, और अन्य
प्रकाशित: (1999)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
द्वारा: Ourmazd, A, और अन्य
प्रकाशित: (1982)

A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
द्वारा: Breese, M, और अन्य
प्रकाशित: (1998)

Understanding and optimising EBIC pn-junction characterisation from modelling insights
द्वारा: Zhou, R, और अन्य
प्रकाशित: (2020)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
द्वारा: Alpass, C, और अन्य
प्रकाशित: (2007)

Dislocation locking by nitrogen impurities in FZ-silicon
द्वारा: Giannattasio, A, और अन्य
प्रकाशित: (2003)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
द्वारा: Alpass, C, और अन्य
प्रकाशित: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
द्वारा: Alpass, C, और अन्य
प्रकाशित: (2008)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
द्वारा: Senkader, S, और अन्य
प्रकाशित: (2001)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
द्वारा: Senkader, S, और अन्य
प्रकाशित: (2004)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
द्वारा: Murphy, J, और अन्य
प्रकाशित: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
द्वारा: Murphy, J, और अन्य
प्रकाशित: (2006)

The influence of nitrogen on dislocation locking in float-zone silicon
द्वारा: Murphy, J, और अन्य
प्रकाशित: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
द्वारा: Murphy, J, और अन्य
प्रकाशित: (2005)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
द्वारा: Giannattasio, A, और अन्य
प्रकाशित: (2005)

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
द्वारा: Senkader, S, और अन्य
प्रकाशित: (2002)

THEORETICAL INVESTIGATIONS OF COMBINED CL AND EBIC MEASUREMENTS ON CRYSTAL DEFECTS
द्वारा: Hildebrandt, S, और अन्य
प्रकाशित: (1989)

Device parameters characterization with the use of EBIC
द्वारा: Oka Kurniawan
प्रकाशित: (2010)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
द्वारा: Murphy, J, और अन्य
प्रकाशित: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
द्वारा: Murphy, J, और अन्य
प्रकाशित: (2005)

Junction depth & defect characterization with the use of EBIC
द्वारा: Phua, Poh Chin.
प्रकाशित: (2008)

Extraction of diffusion length using junction-less EBIC
द्वारा: Ong, Vincent K. S., और अन्य
प्रकाशित: (2010)