MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC

Gelijkaardige items

• TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
  door: Ourmazd, A, et al.
  Gepubliceerd in: (1983)
• THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
  door: Ourmazd, A, et al.
  Gepubliceerd in: (1983)
• SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
  door: Wilshaw, P, et al.
  Gepubliceerd in: (1983)
• SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
  door: Wilshaw, P, et al.
  Gepubliceerd in: (1983)
• NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
  door: Wilshaw, P, et al.
  Gepubliceerd in: (1985)