Growth of In(2)O(3)(100) on Y-stabilized ZrO(2)(100) by O-plasma assisted molecular beam epitaxy
Thin films of In2 O3 have been grown on Y-stabilized Zr O2 (100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650 °C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray ph...
| Main Authors: | , , , , , , , , |
|---|---|
| 格式: | Journal article |
| 语言: | English |
| 出版: |
2008
|