SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100)

The adsorption of triethylgallium on the GaAs (100) (4×1) surface has been studied using the techniques of low energy electron diffraction, x-ray photoelectron and Auger spectroscopies, high resolution electron energy loss spectroscopy and temperature-programmed desorption. Condensed multilayers of...

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Bibliographic Details
Main Authors: Murrell, A, Wee, A, Fairbrother, D, Singh, N, Foord, J, Davies, G, Andrews, D
Format: Journal article
Language:English
Published: 1990