Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy
Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused i...
| Main Authors: | , , , |
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| Format: | Conference item |
| Published: |
2001
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